PESD5V0F1BL,315【PDF 4/12 页】DIODE FEMTOFARAD BI ESD SOD882

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NXP Semiconductors

PESD5V0F1BL

Femtofarad bidirectional ESD protection diode

6. Characteristics

Table 8. Characteristics

T amb = 25 ? C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Per device

V RWM

reverse standoff

-

-

5.5

V

voltage

I RM

reverse leakage current V RWM = 5 V

-

1

100

nA

V BR

C d

breakdown voltage

diode capacitance

I R = 1 mA

f = 1 MHz; V R = 0 V

6

-

8

0.4

10

0.55

V

pF

V CL

clamping voltage

I PP = 1 A

I PP = 2.5 A

-

-

-

-

11

15

V

V

r dif

differential resistance

I R = 20 mA

-

-

30

?

[1]

Non-repetitive current pulse 8/20 ? s exponential decay waveform according to IEC 61000-4-5.

0.5

C d

(pF)

0.4

0.3

006aab598

? V CL ? V BR ? V RWM

I PP

I R

I RM

? I RM

? I R

?

V RWM V BR V CL

+

0.2

? 6.0

? 2.0

2.0

V R (V)

6.0

? I PP

006aaa676

f = 1 MHz; T amb = 25 ? C

Fig 3.

Diode capacitance as a function of reverse

voltage; typical values

Fig 4.

V-I characteristics for a bidirectional

ESD protection diode

PESD5V0F1BL

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 3 — 24 October 2011

? NXP B.V. 2011. All rights reserved.

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